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Uddin, M. N.; Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Nath, K. G.; Nagano, Masamitsu*
Applied Surface Science, 241(1-2), p.246 - 249, 2005/01
Times Cited Count：8 Percentile：37.08(Chemistry, Physical)Recently, much attention has been given on the synthesis and characterization of graphite-like B-C-N hybrid. Since graphite-like B-C-N hybrid may have semiconducting property, this material is interesting for applications to electronic and luminescent devices. In order to synthesize this material, borazine ion plasma was implanted in graphite at room temperature (RT) and 600 
C. An ultrahigh vacuum (UHV) chamber with base pressure 
10
Pa was used for the experiment. The X-ray photoelectron spectroscopy (XPS) study suggested that B atoms in the deposited films are in a wide variety of atomic environment such as BC3, BN3 and B-C-N hybrid. The ratios of these coordinations strongly depend on the temperature during the ion implantation. It was found that the B-C-N hybrid is predominantly synthesized by the implantation at 600 C where the surface [B]/([B]+[C]+[N]) ratio ranges from 0.1 to 0.35. The results imply that it is possible to control the composition of B-C-N hybrid by changing the fluence of the ion plasma and the temperature of graphite during ion implantation.
-BN thin film on Ni(111) using NEXAFS spectroscopyShimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Nath, K. G.
Hyomen Kagaku, 25(9), p.555 - 561, 2004/09
no abstracts in English
Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Nath, K. G.
Journal of Electron Spectroscopy and Related Phenomena, 137-140, p.573 - 578, 2004/07
Times Cited Count：27 Percentile：72.9(Spectroscopy)Hexagonal boron nitride (h-BN) thin film has been epitaxially formed on Ni(111) by chemical vapor deposition using borazine gas. The electronic structure of this system is studied by near edge X-ray absorption fine structure (NEXAFS) spectroscopy and X-ray photoelectron spectroscopy (XPS). The thickness of the h-BN is estimated to be about two-layers from XPS. B K-edge NEXAFS spectra show new 
* peak which is not observed in the spectrum for bulk h-BN. From a polarization dependence analysis of NEXAFS, we propose this new * peak originates from the interaction between the h-BN and Ni(111). This new * peak clearly proves that conduction band of h-BN/Ni(111) is different from that of bulk h-BN.
Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Nath, K. G.; Sasaki, Masayoshi*; Okuno, Kenji*
Journal of Vacuum Science and Technology A, 21(6), p.1843 - 1848, 2003/11
Times Cited Count：6 Percentile：28.14(Materials Science, Coatings & Films)Ion implantation method is applied to synthesize B-C-N hybrids and their electronic structures are characterized by X-ray photoelectron spectroscopy. A boron nitride film is deposited on a graphite target by borazine plasma implantation. At the interface between the BN film and the graphite, variety of bonding combinations including B-N, B-C, and C-N are observed. This proved that B-C-N hybrids is formed by this method.
